@InCollection{FornariForRapAbrTra:2018:MoCaSi,
author = "Fornari, Celso Israel and Fornari, Gabriel and Rappl, Paulo
Henrique de Oliveira and Abramof, Eduardo and Travelho,
Jer{\^o}nimo dos Santos",
title = "Monte Carlo Simulation of Epitaxial Growth",
booktitle = "Epitaxy",
publisher = "InTech",
year = "2018",
editor = "Zhong, M.",
pages = "113--129",
keywords = "Monte Carlo simulation, molecular beam epitaxy, epitaxial growth,
lattice-matched substrates.",
abstract = "A numerical Monte Carlo (MC) model is described in detail to
simulate epitaxial growth. This model allows the formation of
structural defects, like substitutional defects and vacancies, and
desorption of adsorbed atoms on the surface. The latter feature
supports the study of epitaxial growth at very high kinetic
regime. The model proposed here is applied to simulate the
homoepitaxial growth of Si. The results obtained fit well to the
experimental reports on (0 0 1) silicon homoepitaxy. The easy
implementation of a large number of microscopic processes and the
three-dimensional spatial information during the film growth
suggests that the model can be applied to simulate the growth of
binary, ternary, or more compounds and even the growth of
superlattices and heterostructures.",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)}",
doi = "10.5772/intechopen.70220",
url = "http://dx.doi.org/10.5772/intechopen.70220",
isbn = "9789535138891",
label = "lattes: 8086526958304657 2 FornariForRapAbrTra:2018:MoCaSi",
language = "pt",
targetfile = "fornari_monte carlo.pdf",
url = "http://www.intechopen.com/books/epitaxy/monte-carlo-simulation-of-epitaxial-growth",
urlaccessdate = "02 maio 2024"
}